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NSBC114EDP6T5G

NSBC114EDP6T5G

For Reference Only

Part Number NSBC114EDP6T5G
PNEDA Part # NSBC114EDP6T5G
Description TRANS 2NPN PREBIAS 0.408W SOT963
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,988
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 30 - Apr 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NSBC114EDP6T5G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNSBC114EDP6T5G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
NSBC114EDP6T5G, NSBC114EDP6T5G Datasheet (Total Pages: 8, Size: 150.83 KB)
PDFNSVBC114EDXV6T1G Datasheet Cover
NSVBC114EDXV6T1G Datasheet Page 2 NSVBC114EDXV6T1G Datasheet Page 3 NSVBC114EDXV6T1G Datasheet Page 4 NSVBC114EDXV6T1G Datasheet Page 5 NSVBC114EDXV6T1G Datasheet Page 6 NSVBC114EDXV6T1G Datasheet Page 7 NSVBC114EDXV6T1G Datasheet Page 8

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NSBC114EDP6T5G Specifications

ManufacturerON Semiconductor
Series-
Transistor Type2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max408mW
Mounting TypeSurface Mount
Package / CaseSOT-963
Supplier Device PackageSOT-963

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