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NSBA123EF3T5G

NSBA123EF3T5G

For Reference Only

Part Number NSBA123EF3T5G
PNEDA Part # NSBA123EF3T5G
Description TRANS PREBIAS DUAL PNP
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,112
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 19 - Apr 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NSBA123EF3T5G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNSBA123EF3T5G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single, Pre-Biased
Datasheet
NSBA123EF3T5G, NSBA123EF3T5G Datasheet (Total Pages: 11, Size: 170.74 KB)
PDFMMUN2131LT1G Datasheet Cover
MMUN2131LT1G Datasheet Page 2 MMUN2131LT1G Datasheet Page 3 MMUN2131LT1G Datasheet Page 4 MMUN2131LT1G Datasheet Page 5 MMUN2131LT1G Datasheet Page 6 MMUN2131LT1G Datasheet Page 7 MMUN2131LT1G Datasheet Page 8 MMUN2131LT1G Datasheet Page 9 MMUN2131LT1G Datasheet Page 10 MMUN2131LT1G Datasheet Page 11

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NSBA123EF3T5G Specifications

ManufacturerON Semiconductor
Series-
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce8 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max254mW
Mounting TypeSurface Mount
Package / CaseSOT-1123
Supplier Device PackageSOT-1123

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