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NSBA113EDXV6T1G

NSBA113EDXV6T1G

For Reference Only

Part Number NSBA113EDXV6T1G
PNEDA Part # NSBA113EDXV6T1G
Description TRANS 2PNP PREBIAS 0.25W SOT563
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,442
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NSBA113EDXV6T1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNSBA113EDXV6T1G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
NSBA113EDXV6T1G, NSBA113EDXV6T1G Datasheet (Total Pages: 6, Size: 69.83 KB)
PDFMUN5130DW1T1G Datasheet Cover
MUN5130DW1T1G Datasheet Page 2 MUN5130DW1T1G Datasheet Page 3 MUN5130DW1T1G Datasheet Page 4 MUN5130DW1T1G Datasheet Page 5 MUN5130DW1T1G Datasheet Page 6

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NSBA113EDXV6T1G Specifications

ManufacturerON Semiconductor
Series-
Transistor Type2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)1kOhms
Resistor - Emitter Base (R2)1kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max250mW
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88/SC70-6/SOT-363

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