NRVUS360VDBT3G
For Reference Only
| Part Number | NRVUS360VDBT3G |
| PNEDA Part # | NRVUS360VDBT3G |
| Description | DIODE GEN PURP 600V 3A SMB |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 5,508 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NRVUS360VDBT3G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NRVUS360VDBT3G |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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NRVUS360VDBT3G Specifications
| Manufacturer | ON Semiconductor |
| Series | Automotive, AEC-Q101 |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 3A |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 3A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75ns |
| Current - Reverse Leakage @ Vr | 3µA @ 600V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AA, SMB |
| Supplier Device Package | SMB |
| Operating Temperature - Junction | -65°C ~ 175°C |
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Manufacturer Microsemi Corporation Series * Diode Type - Voltage - DC Reverse (Vr) (Max) - Current - Average Rectified (Io) - Voltage - Forward (Vf) (Max) @ If - Speed - Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr - Capacitance @ Vr, F - Mounting Type - Package / Case - Supplier Device Package - Operating Temperature - Junction - |
Manufacturer Powerex Inc. Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 2600V Current - Average Rectified (Io) 300A Voltage - Forward (Vf) (Max) @ If 2.15V @ 1500A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 9µs Current - Reverse Leakage @ Vr 50mA @ 2600V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-200AA, A-PUK Supplier Device Package DO-200AA, R62 Operating Temperature - Junction -65°C ~ 200°C |
Manufacturer Vishay Semiconductor Diodes Division Series eSMP® Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 50V Current - Average Rectified (Io) 7A Voltage - Forward (Vf) (Max) @ If 550mV @ 7A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 150µA @ 50V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 150°C |
