NRVBM2H100T3G
For Reference Only
| Part Number | NRVBM2H100T3G |
| PNEDA Part # | NRVBM2H100T3G |
| Description | DIODE SCHOTTKY 100V 2A POWERMITE |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 4,302 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Feb 19 - Feb 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NRVBM2H100T3G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NRVBM2H100T3G |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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NRVBM2H100T3G Specifications
| Manufacturer | ON Semiconductor |
| Series | POWERMITE® |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Current - Average Rectified (Io) | 2A |
| Voltage - Forward (Vf) (Max) @ If | 680mV @ 2A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 20µA @ 100V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | DO-216AA |
| Supplier Device Package | Powermite |
| Operating Temperature - Junction | -65°C ~ 175°C |
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Manufacturer Vishay Semiconductor Diodes Division Series TMBS® Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 120V Current - Average Rectified (Io) 30A Voltage - Forward (Vf) (Max) @ If 1.28V @ 30A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 500µA @ 120V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package TO-263AB Operating Temperature - Junction -40°C ~ 150°C |
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