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NP89N055NUK-S18-AY

NP89N055NUK-S18-AY

For Reference Only

Part Number NP89N055NUK-S18-AY
PNEDA Part # NP89N055NUK-S18-AY
Description MOSFET N-CH 55V 90A TO-220
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 5,562
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NP89N055NUK-S18-AY Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberNP89N055NUK-S18-AY
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NP89N055NUK-S18-AY, NP89N055NUK-S18-AY Datasheet (Total Pages: 8, Size: 263.11 KB)
PDFNP89N055NUK-S18-AY Datasheet Cover
NP89N055NUK-S18-AY Datasheet Page 2 NP89N055NUK-S18-AY Datasheet Page 3 NP89N055NUK-S18-AY Datasheet Page 4 NP89N055NUK-S18-AY Datasheet Page 5 NP89N055NUK-S18-AY Datasheet Page 6 NP89N055NUK-S18-AY Datasheet Page 7 NP89N055NUK-S18-AY Datasheet Page 8

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NP89N055NUK-S18-AY Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.4mOhm @ 45A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs102nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6000pF @ 25V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 147W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Full Pack, I²Pak

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