NP60N04KUG-E1-AY
For Reference Only
| Part Number | NP60N04KUG-E1-AY |
| PNEDA Part # | NP60N04KUG-E1-AY |
| Description | MOSFET N-CH 40V 60A TO-263 |
| Manufacturer | Renesas Electronics America |
| Unit Price | Request a Quote |
| In Stock | 8,568 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
NP60N04KUG-E1-AY Resources
| Brand | Renesas Electronics America |
| ECAD Module |
|
| Mfr. Part Number | NP60N04KUG-E1-AY |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- NP60N04KUG-E1-AY Datasheet
- where to find NP60N04KUG-E1-AY
- Renesas Electronics America
- Renesas Electronics America NP60N04KUG-E1-AY
- NP60N04KUG-E1-AY PDF Datasheet
- NP60N04KUG-E1-AY Stock
- NP60N04KUG-E1-AY Pinout
- Datasheet NP60N04KUG-E1-AY
- NP60N04KUG-E1-AY Supplier
- Renesas Electronics America Distributor
- NP60N04KUG-E1-AY Price
- NP60N04KUG-E1-AY Distributor
NP60N04KUG-E1-AY Specifications
| Manufacturer | Renesas Electronics America |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 6.1mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 95nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 88W (Tc) |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 13.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 330mOhm @ 9.4A, 10V Vgs(th) (Max) @ Id 5V @ 750µA Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1820pF @ 25V FET Feature - Power Dissipation (Max) 156W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO247-3 Package / Case TO-247-3 |
Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.6Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 600pF @ 25V FET Feature - Power Dissipation (Max) 77.6W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package MP-3A Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 12A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 9mOhm @ 80A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V FET Feature - Power Dissipation (Max) 310W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK (TO-262) Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 8.5mOhm @ 20A, 4.5V Vgs(th) (Max) @ Id 600mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 2660pF @ 20V FET Feature - Power Dissipation (Max) 8.3W (Ta), 71W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252, (D-Pak) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 25A (Ta) Drive Voltage (Max Rds On, Min Rds On) 7V, 10V Rds On (Max) @ Id, Vgs 16mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 105nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6500pF @ 10V FET Feature - Power Dissipation (Max) 30W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK Package / Case SC-100, SOT-669 |
