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NP60N03SUG-E1-AY

NP60N03SUG-E1-AY

For Reference Only

Part Number NP60N03SUG-E1-AY
PNEDA Part # NP60N03SUG-E1-AY
Description MOSFET N-CH 30V 60A TO-252
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 6,714
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NP60N03SUG-E1-AY Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberNP60N03SUG-E1-AY
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NP60N03SUG-E1-AY, NP60N03SUG-E1-AY Datasheet (Total Pages: 10, Size: 306.44 KB)
PDFNP60N03SUG-E1-AY Datasheet Cover
NP60N03SUG-E1-AY Datasheet Page 2 NP60N03SUG-E1-AY Datasheet Page 3 NP60N03SUG-E1-AY Datasheet Page 4 NP60N03SUG-E1-AY Datasheet Page 5 NP60N03SUG-E1-AY Datasheet Page 6 NP60N03SUG-E1-AY Datasheet Page 7 NP60N03SUG-E1-AY Datasheet Page 8 NP60N03SUG-E1-AY Datasheet Page 9 NP60N03SUG-E1-AY Datasheet Page 10

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NP60N03SUG-E1-AY Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs135nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7500pF @ 25V
FET Feature-
Power Dissipation (Max)1.2W (Ta), 105W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252 (MP-3ZK)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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