Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NP180N055TUK-E1-AY

NP180N055TUK-E1-AY

For Reference Only

Part Number NP180N055TUK-E1-AY
PNEDA Part # NP180N055TUK-E1-AY
Description MOSFET N-CH 55V 180A TO-263
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 8,064
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 5 - Apr 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NP180N055TUK-E1-AY Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberNP180N055TUK-E1-AY
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NP180N055TUK-E1-AY, NP180N055TUK-E1-AY Datasheet (Total Pages: 8, Size: 259.03 KB)
PDFNP180N055TUK-E1-AY Datasheet Cover
NP180N055TUK-E1-AY Datasheet Page 2 NP180N055TUK-E1-AY Datasheet Page 3 NP180N055TUK-E1-AY Datasheet Page 4 NP180N055TUK-E1-AY Datasheet Page 5 NP180N055TUK-E1-AY Datasheet Page 6 NP180N055TUK-E1-AY Datasheet Page 7 NP180N055TUK-E1-AY Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NP180N055TUK-E1-AY Datasheet
  • where to find NP180N055TUK-E1-AY
  • Renesas Electronics America

  • Renesas Electronics America NP180N055TUK-E1-AY
  • NP180N055TUK-E1-AY PDF Datasheet
  • NP180N055TUK-E1-AY Stock

  • NP180N055TUK-E1-AY Pinout
  • Datasheet NP180N055TUK-E1-AY
  • NP180N055TUK-E1-AY Supplier

  • Renesas Electronics America Distributor
  • NP180N055TUK-E1-AY Price
  • NP180N055TUK-E1-AY Distributor

NP180N055TUK-E1-AY Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.4mOhm @ 90A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs294nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds16050pF @ 25V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 348W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263-7
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

The Products You May Be Interested In

IRLR2905TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

42A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

27mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

48nC @ 5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

1700pF @ 25V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRF634

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

8.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

450mOhm @ 5.1A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

41nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

770pF @ 25V

FET Feature

-

Power Dissipation (Max)

74W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

FDPF7N60NZT

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UniFET-II™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

6.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.25Ohm @ 3.25A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

730pF @ 25V

FET Feature

-

Power Dissipation (Max)

33W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

Manufacturer

IXYS

Series

HiPerFET™, Polar3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

150A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

19mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

197nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

12100pF @ 25V

FET Feature

-

Power Dissipation (Max)

1300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-264AA (IXFK)

Package / Case

TO-264-3, TO-264AA

IXTP6N50P

IXYS

Manufacturer

IXYS

Series

PolarHV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.1Ohm @ 3A, 10V

Vgs(th) (Max) @ Id

5V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

14.6nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

740pF @ 25V

FET Feature

-

Power Dissipation (Max)

100W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

W25Q16JVZPIQ TR

W25Q16JVZPIQ TR

Winbond Electronics

IC FLASH 16M SPI 133MHZ 8WSON

DLW5BSN191SQ2L

DLW5BSN191SQ2L

Murata

CMC 5A 2LN 190 OHM SMD

TAJB107M006RNJ

TAJB107M006RNJ

CAP TANT 100UF 20% 6.3V 1411

NM93CS46M8

NM93CS46M8

ON Semiconductor

IC EEPROM 1K SPI 1MHZ 8SO

NRVBS3100T3G

NRVBS3100T3G

ON Semiconductor

DIODE SCHOTTKY 100V 3A SMC

MPZ2012S300AT000

MPZ2012S300AT000

TDK

FERRITE BEAD 30 OHM 0805 1LN

XC7A75T-2FGG676I

XC7A75T-2FGG676I

Xilinx

IC FPGA 300 I/O 676FBGA

7447709220

7447709220

Wurth Electronics

FIXED IND 22UH 5.3A 28 MOHM SMD

CS325S25000000ABJT

CS325S25000000ABJT

Citizen Finedevice

CRYSTAL 25.0000MHZ 18PF SMD

CMS15(TE12L,Q,M)

CMS15(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 3A M-FLAT

AS5040-ASST

AS5040-ASST

ams

ROTARY ENCODER MAGNETIC 512PPR

IHLP2525CZER220M5A

IHLP2525CZER220M5A

Vishay Dale

FIXED IND 22UH 2.8A 174 MOHM SMD