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NP180N04TUG-E1-AY

NP180N04TUG-E1-AY

For Reference Only

Part Number NP180N04TUG-E1-AY
PNEDA Part # NP180N04TUG-E1-AY
Description MOSFET N-CH 40V 180A TO-263-7
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 5,904
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NP180N04TUG-E1-AY Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberNP180N04TUG-E1-AY
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NP180N04TUG-E1-AY, NP180N04TUG-E1-AY Datasheet (Total Pages: 10, Size: 306.28 KB)
PDFNP180N04TUG-E1-AY Datasheet Cover
NP180N04TUG-E1-AY Datasheet Page 2 NP180N04TUG-E1-AY Datasheet Page 3 NP180N04TUG-E1-AY Datasheet Page 4 NP180N04TUG-E1-AY Datasheet Page 5 NP180N04TUG-E1-AY Datasheet Page 6 NP180N04TUG-E1-AY Datasheet Page 7 NP180N04TUG-E1-AY Datasheet Page 8 NP180N04TUG-E1-AY Datasheet Page 9 NP180N04TUG-E1-AY Datasheet Page 10

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NP180N04TUG-E1-AY Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.5mOhm @ 90A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs390nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds25700pF @ 25V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 288W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263-7
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

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