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NP109N04PUJ-E2B-AY

NP109N04PUJ-E2B-AY

For Reference Only

Part Number NP109N04PUJ-E2B-AY
PNEDA Part # NP109N04PUJ-E2B-AY
Description TRANSISTOR
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 6,444
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 29 - Dec 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NP109N04PUJ-E2B-AY Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberNP109N04PUJ-E2B-AY
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NP109N04PUJ-E2B-AY, NP109N04PUJ-E2B-AY Datasheet (Total Pages: 10, Size: 310.83 KB)
PDFNP109N04PUJ-E2B-AY Datasheet Cover
NP109N04PUJ-E2B-AY Datasheet Page 2 NP109N04PUJ-E2B-AY Datasheet Page 3 NP109N04PUJ-E2B-AY Datasheet Page 4 NP109N04PUJ-E2B-AY Datasheet Page 5 NP109N04PUJ-E2B-AY Datasheet Page 6 NP109N04PUJ-E2B-AY Datasheet Page 7 NP109N04PUJ-E2B-AY Datasheet Page 8 NP109N04PUJ-E2B-AY Datasheet Page 9 NP109N04PUJ-E2B-AY Datasheet Page 10

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NP109N04PUJ-E2B-AY Specifications

ManufacturerRenesas Electronics America
Series-
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

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