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NJVNJD35N04T4G

NJVNJD35N04T4G

For Reference Only

Part Number NJVNJD35N04T4G
PNEDA Part # NJVNJD35N04T4G
Description TRANS NPN DARL 350V 4A DPAK-4
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 18,660
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NJVNJD35N04T4G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNJVNJD35N04T4G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single
Datasheet
NJVNJD35N04T4G, NJVNJD35N04T4G Datasheet (Total Pages: 4, Size: 122.6 KB)
PDFNJVNJD35N04G Datasheet Cover
NJVNJD35N04G Datasheet Page 2 NJVNJD35N04G Datasheet Page 3 NJVNJD35N04G Datasheet Page 4

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NJVNJD35N04T4G Specifications

ManufacturerON Semiconductor
Series-
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)4A
Voltage - Collector Emitter Breakdown (Max)350V
Vce Saturation (Max) @ Ib, Ic1.5V @ 20mA, 2A
Current - Collector Cutoff (Max)50µA
DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 2A, 2V
Power - Max45W
Frequency - Transition90MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK

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