NJVMJD45H11T4G
For Reference Only
| Part Number | NJVMJD45H11T4G |
| PNEDA Part # | NJVMJD45H11T4G |
| Description | TRANS PNP 80V 8A DPAK-4 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,508 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Feb 19 - Feb 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NJVMJD45H11T4G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NJVMJD45H11T4G |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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NJVMJD45H11T4G Specifications
| Manufacturer | ON Semiconductor |
| Series | Automotive, AEC-Q101 |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 8A |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A |
| Current - Collector Cutoff (Max) | 1μA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 2A, 1V |
| Power - Max | 1.75W |
| Frequency - Transition | 90MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | DPAK |
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Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type PNP Current - Collector (Ic) (Max) 3A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 1.5V @ 1.5mA, 1.5A Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 2A, 2V Power - Max 2W Frequency - Transition - Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220NIS |
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