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NJVMJD122T4G-VF01

NJVMJD122T4G-VF01

For Reference Only

Part Number NJVMJD122T4G-VF01
PNEDA Part # NJVMJD122T4G-VF01
Description TRANS NPN DARL 100V 8A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 5,094
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NJVMJD122T4G-VF01 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNJVMJD122T4G-VF01
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single
Datasheet
NJVMJD122T4G-VF01, NJVMJD122T4G-VF01 Datasheet (Total Pages: 8, Size: 100.84 KB)
PDFMJD122T4 Datasheet Cover
MJD122T4 Datasheet Page 2 MJD122T4 Datasheet Page 3 MJD122T4 Datasheet Page 4 MJD122T4 Datasheet Page 5 MJD122T4 Datasheet Page 6 MJD122T4 Datasheet Page 7 MJD122T4 Datasheet Page 8

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NJVMJD122T4G-VF01 Specifications

ManufacturerON Semiconductor
Series-
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)8A
Voltage - Collector Emitter Breakdown (Max)100V
Vce Saturation (Max) @ Ib, Ic4V @ 8A, 80mA
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 4A, 4V
Power - Max1.75W
Frequency - Transition-
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK

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