NJVMJD112G
For Reference Only
Part Number | NJVMJD112G |
PNEDA Part # | NJVMJD112G |
Description | TRANS NPN DARL 100V 2A DPAK-4 |
Manufacturer | ON Semiconductor |
Unit Price | Request a Quote |
In Stock | 5,238 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NJVMJD112G Resources
Brand | ON Semiconductor |
ECAD Module | |
Mfr. Part Number | NJVMJD112G |
Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
Datasheet |
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Logistics Mode
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NJVMJD112G Specifications
Manufacturer | ON Semiconductor |
Series | - |
Transistor Type | NPN - Darlington |
Current - Collector (Ic) (Max) | 2A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
Current - Collector Cutoff (Max) | 20µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V |
Power - Max | 1.75W |
Frequency - Transition | 25MHz |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | DPAK |
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