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NJVBUB323ZT4G

NJVBUB323ZT4G

For Reference Only

Part Number NJVBUB323ZT4G
PNEDA Part # NJVBUB323ZT4G
Description TRANS NPN DARL 350V 10A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,768
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 30 - Dec 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NJVBUB323ZT4G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNJVBUB323ZT4G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Single
Datasheet
NJVBUB323ZT4G, NJVBUB323ZT4G Datasheet (Total Pages: 8, Size: 79.65 KB)
PDFBUB323Z Datasheet Cover
BUB323Z Datasheet Page 2 BUB323Z Datasheet Page 3 BUB323Z Datasheet Page 4 BUB323Z Datasheet Page 5 BUB323Z Datasheet Page 6 BUB323Z Datasheet Page 7 BUB323Z Datasheet Page 8

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NJVBUB323ZT4G Specifications

ManufacturerON Semiconductor
Series-
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)10A
Voltage - Collector Emitter Breakdown (Max)350V
Vce Saturation (Max) @ Ib, Ic1.7V @ 250mA, 10A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce500 @ 5A, 4.6V
Power - Max150W
Frequency - Transition2MHz
Operating Temperature-65°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK-3

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