NGTD8R65F2WP
For Reference Only
| Part Number | NGTD8R65F2WP |
| PNEDA Part # | NGTD8R65F2WP |
| Description | DIODE GEN PURP 650V DIE |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 5,706 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NGTD8R65F2WP Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NGTD8R65F2WP |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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NGTD8R65F2WP Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 650V |
| Current - Average Rectified (Io) | - |
| Voltage - Forward (Vf) (Max) @ If | 2.8V @ 30A |
| Speed | - |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 1µA @ 650V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
| Operating Temperature - Junction | 175°C (Max) |
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Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.2V @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 200ns Current - Reverse Leakage @ Vr 5µA @ 200V Capacitance @ Vr, F 12pF @ 4V, 1MHz Mounting Type Through Hole Package / Case DO-204AL, DO-41, Axial Supplier Device Package DO-204AL (DO-41) Operating Temperature - Junction -50°C ~ 150°C |
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