NGB18N40CLBT4G
For Reference Only
| Part Number | NGB18N40CLBT4G |
| PNEDA Part # | NGB18N40CLBT4G |
| Description | IGBT 430V 18A 115W D2PAK |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 4,122 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 21 - Apr 26 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NGB18N40CLBT4G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NGB18N40CLBT4G |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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NGB18N40CLBT4G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 430V |
| Current - Collector (Ic) (Max) | 18A |
| Current - Collector Pulsed (Icm) | 50A |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 4V, 15A |
| Power - Max | 115W |
| Switching Energy | - |
| Input Type | Logic |
| Gate Charge | - |
| Td (on/off) @ 25°C | - |
| Test Condition | - |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | D2PAK |
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Manufacturer STMicroelectronics Series PowerMESH™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 60A Current - Collector Pulsed (Icm) 100A Vce(on) (Max) @ Vge, Ic 3.85V @ 15V, 20A Power - Max 220W Switching Energy 2.4mJ (on), 4.3mJ (off) Input Type Standard Gate Charge 105nC Td (on/off) @ 25°C 36ns/251ns Test Condition 960V, 20A, 10Ohm, 15V Reverse Recovery Time (trr) 84ns Operating Temperature -55°C ~ 125°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 |
Manufacturer Rohm Semiconductor Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 40A Current - Collector Pulsed (Icm) 60A Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 20A Power - Max 144W Switching Energy - Input Type Standard Gate Charge 40nC Td (on/off) @ 25°C 22ns/75ns Test Condition 400V, 20A, 10Ohm, 15V Reverse Recovery Time (trr) 58ns Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247N |
Manufacturer Microsemi Corporation Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 63A Current - Collector Pulsed (Icm) 90A Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 30A Power - Max 203W Switching Energy 525µJ (on), 700µJ (off) Input Type Standard Gate Charge 165nC Td (on/off) @ 25°C 12ns/155ns Test Condition 400V, 30A, 4.3Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 [B] |
