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NE85639R-T1-A

NE85639R-T1-A

For Reference Only

Part Number NE85639R-T1-A
PNEDA Part # NE85639R-T1-A
Description RF TRANS NPN 12V 9GHZ SOT143R
Manufacturer CEL
Unit Price Request a Quote
In Stock 7,902
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NE85639R-T1-A Resources

Brand CEL
ECAD Module ECAD
Mfr. Part NumberNE85639R-T1-A
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF
Datasheet
NE85639R-T1-A, NE85639R-T1-A Datasheet (Total Pages: 6, Size: 970.77 KB)
PDFNE85639-T1-R28-A Datasheet Cover
NE85639-T1-R28-A Datasheet Page 2 NE85639-T1-R28-A Datasheet Page 3 NE85639-T1-R28-A Datasheet Page 4 NE85639-T1-R28-A Datasheet Page 5 NE85639-T1-R28-A Datasheet Page 6

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NE85639R-T1-A Specifications

ManufacturerCEL
Series-
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition9GHz
Noise Figure (dB Typ @ f)1.5dB ~ 2.1dB @ 1GHz
Gain13.5dB
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 20mA, 10V
Current - Collector (Ic) (Max)100mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-143R
Supplier Device PackageSOT-143R

The Products You May Be Interested In

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

4.5GHz

Noise Figure (dB Typ @ f)

1.2dB @ 1GHz

Gain

9dB

Power - Max

200mW

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 7mA, 3V

Current - Collector (Ic) (Max)

100mA

Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SOT-363

Manufacturer

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

10GHz

Noise Figure (dB Typ @ f)

1.8dB @ 2GHz

Gain

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Power - Max

150mW

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 10mA, 6V

Current - Collector (Ic) (Max)

35mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SC-82A, SOT-343

Supplier Device Package

SOT-343

TPR700

Microsemi

Manufacturer

Microsemi Corporation

Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

65V

Frequency - Transition

1.03GHz ~ 1.09GHz

Noise Figure (dB Typ @ f)

-

Gain

6.7dB

Power - Max

2050W

DC Current Gain (hFE) (Min) @ Ic, Vce

10 @ 1A, 5V

Current - Collector (Ic) (Max)

55A

Operating Temperature

200°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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80277H

Microsemi

Manufacturer

Microsemi Corporation

Series

-

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Gain

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DC Current Gain (hFE) (Min) @ Ic, Vce

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BFR183E6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

12V

Frequency - Transition

8GHz

Noise Figure (dB Typ @ f)

0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz

Gain

17.5dB

Power - Max

450mW

DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3

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