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NE68039R-T1-A

NE68039R-T1-A

For Reference Only

Part Number NE68039R-T1-A
PNEDA Part # NE68039R-T1-A
Description RF TRANS NPN 10V 10GHZ SOT143R
Manufacturer CEL
Unit Price Request a Quote
In Stock 7,362
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NE68039R-T1-A Resources

Brand CEL
ECAD Module ECAD
Mfr. Part NumberNE68039R-T1-A
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF
Datasheet
NE68039R-T1-A, NE68039R-T1-A Datasheet (Total Pages: 19, Size: 901.45 KB)
PDFNE68030-T1-R45-A Datasheet Cover
NE68030-T1-R45-A Datasheet Page 2 NE68030-T1-R45-A Datasheet Page 3 NE68030-T1-R45-A Datasheet Page 4 NE68030-T1-R45-A Datasheet Page 5 NE68030-T1-R45-A Datasheet Page 6 NE68030-T1-R45-A Datasheet Page 7 NE68030-T1-R45-A Datasheet Page 8 NE68030-T1-R45-A Datasheet Page 9 NE68030-T1-R45-A Datasheet Page 10 NE68030-T1-R45-A Datasheet Page 11

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NE68039R-T1-A Specifications

ManufacturerCEL
Series-
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)10V
Frequency - Transition10GHz
Noise Figure (dB Typ @ f)1.7dB ~ 2.6dB @ 2GHz ~ 4GHz
Gain6.5dB ~ 11dB
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 6V
Current - Collector (Ic) (Max)35mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-143R
Supplier Device PackageSOT-143R

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Series

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

1.9dB @ 2GHz

Gain

7.5dB

Power - Max

200mW

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 5mA, 3V

Current - Collector (Ic) (Max)

35mA

Operating Temperature

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Series

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

11GHz

Noise Figure (dB Typ @ f)

0.65dB @ 900MHz

Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 10mA, 8V

Current - Collector (Ic) (Max)

40mA

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Central Semiconductor Corp

Manufacturer

Central Semiconductor Corp

Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

900MHz

Noise Figure (dB Typ @ f)

6dB @ 60MHz

Gain

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Power - Max

625mW

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 8mA, 1V

Current - Collector (Ic) (Max)

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Operating Temperature

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TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

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Microsemi

Manufacturer

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Infineon Technologies

Manufacturer

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

1dB ~ 1.3dB @ 1.8GHz ~ 3GHz

Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

SC-101, SOT-883

Supplier Device Package

PG-TSLP-3-1

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