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NE68039-T1-R46-A

NE68039-T1-R46-A

For Reference Only

Part Number NE68039-T1-R46-A
PNEDA Part # NE68039-T1-R46-A
Description RF TRANS NPN 10V 10GHZ SOT143
Manufacturer CEL
Unit Price Request a Quote
In Stock 5,778
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 5 - Apr 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NE68039-T1-R46-A Resources

Brand CEL
ECAD Module ECAD
Mfr. Part NumberNE68039-T1-R46-A
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF
Datasheet
NE68039-T1-R46-A, NE68039-T1-R46-A Datasheet (Total Pages: 6, Size: 2,675.58 KB)
PDFNE68039-T1-R46-A Datasheet Cover
NE68039-T1-R46-A Datasheet Page 2 NE68039-T1-R46-A Datasheet Page 3 NE68039-T1-R46-A Datasheet Page 4 NE68039-T1-R46-A Datasheet Page 5 NE68039-T1-R46-A Datasheet Page 6

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NE68039-T1-R46-A Specifications

ManufacturerCEL
Series-
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)10V
Frequency - Transition10GHz
Noise Figure (dB Typ @ f)1.8dB @ 2GHz
Gain12dB
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 6V
Current - Collector (Ic) (Max)35mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-253-4, TO-253AA
Supplier Device Package-

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

1.1dB @ 1GHz

Gain

13dB

Power - Max

150mW

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 20mA, 10V

Current - Collector (Ic) (Max)

100mA

Operating Temperature

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SC-82A, SOT-343

Supplier Device Package

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Microsemi

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Series

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Frequency - Transition

960MHz ~ 1.215GHz

Noise Figure (dB Typ @ f)

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Gain

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Power - Max

75W

DC Current Gain (hFE) (Min) @ Ic, Vce

15 @ 1A, 5V

Current - Collector (Ic) (Max)

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Operating Temperature

250°C (TJ)

Mounting Type

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UMIL100A

Microsemi

Manufacturer

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Series

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Voltage - Collector Emitter Breakdown (Max)

31V

Frequency - Transition

225MHz ~ 400MHz

Noise Figure (dB Typ @ f)

-

Gain

7.2dB ~ 8.5dB

Power - Max

270W

DC Current Gain (hFE) (Min) @ Ic, Vce

10 @ 1A, 5V

Current - Collector (Ic) (Max)

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Operating Temperature

150°C (TJ)

Mounting Type

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2SC5277A-2-TL-E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

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Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

10V

Frequency - Transition

8GHz

Noise Figure (dB Typ @ f)

1.4dB ~ 0.9dB @ 1.5GHz ~ 1GHz

Gain

10dB ~ 5.5dB @ 1.5GHz

Power - Max

100mW

DC Current Gain (hFE) (Min) @ Ic, Vce

90 @ 10mA, 5V

Current - Collector (Ic) (Max)

30mA

Operating Temperature

-

Mounting Type

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Package / Case

SC-75, SOT-416

Supplier Device Package

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NXP

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NXP USA Inc.

Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

12V

Frequency - Transition

5GHz

Noise Figure (dB Typ @ f)

2.4dB @ 500MHz

Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Operating Temperature

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Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

TO-236AB (SOT23)

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