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NE67839-A

NE67839-A

For Reference Only

Part Number NE67839-A
PNEDA Part # NE67839-A
Description RF TRANS NPN 6V 12GHZ SOT143
Manufacturer CEL
Unit Price Request a Quote
In Stock 7,416
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 19 - Apr 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NE67839-A Resources

Brand CEL
ECAD Module ECAD
Mfr. Part NumberNE67839-A
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF
Datasheet
NE67839-A, NE67839-A Datasheet (Total Pages: 9, Size: 2,562.32 KB)
PDFNE67839-A Datasheet Cover
NE67839-A Datasheet Page 2 NE67839-A Datasheet Page 3 NE67839-A Datasheet Page 4 NE67839-A Datasheet Page 5 NE67839-A Datasheet Page 6 NE67839-A Datasheet Page 7 NE67839-A Datasheet Page 8 NE67839-A Datasheet Page 9

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NE67839-A Specifications

ManufacturerCEL
Series-
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)6V
Frequency - Transition12GHz
Noise Figure (dB Typ @ f)1.5dB @ 2GHz
Gain10dB
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce75 @ 30mA, 3V
Current - Collector (Ic) (Max)100mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-253-4, TO-253AA
Supplier Device Package-

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

1.9dB @ 2GHz

Gain

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Power - Max

150mW

DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Operating Temperature

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-65°C ~ 150°C (TJ)

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Microsemi

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Frequency - Transition

890MHz ~ 1GHz

Noise Figure (dB Typ @ f)

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8.1dB ~ 8.5dB

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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200°C (TJ)

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Microsemi

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Manufacturer

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Series

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

1.5dB ~ 2dB @ 500MHz ~ 1GHz

Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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