Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NDS9407

NDS9407

For Reference Only

Part Number NDS9407
PNEDA Part # NDS9407
Description MOSFET P-CH 60V 3A 8-SOIC
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 51,696
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 21 - Apr 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NDS9407 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNDS9407
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NDS9407, NDS9407 Datasheet (Total Pages: 5, Size: 338.15 KB)
PDFNDS9407 Datasheet Cover
NDS9407 Datasheet Page 2 NDS9407 Datasheet Page 3 NDS9407 Datasheet Page 4 NDS9407 Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NDS9407 Datasheet
  • where to find NDS9407
  • ON Semiconductor

  • ON Semiconductor NDS9407
  • NDS9407 PDF Datasheet
  • NDS9407 Stock

  • NDS9407 Pinout
  • Datasheet NDS9407
  • NDS9407 Supplier

  • ON Semiconductor Distributor
  • NDS9407 Price
  • NDS9407 Distributor

NDS9407 Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs150mOhm @ 3A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds732pF @ 30V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

The Products You May Be Interested In

NTD3055L170T4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V

Rds On (Max) @ Id, Vgs

170mOhm @ 4.5A, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

275pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta), 28.5W (Tj)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

SPP07N60S5

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

7.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

600mOhm @ 4.6A, 10V

Vgs(th) (Max) @ Id

5.5V @ 350µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

970pF @ 25V

FET Feature

-

Power Dissipation (Max)

83W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

AUIRFN8405TR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

95A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

3.9V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

117nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5142pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.3W (Ta), 136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PQFN (5x6)

Package / Case

8-PowerTDFN

PH2530AL,115

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

2.4mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

57nC @ 10V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

3468pF @ 12V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

LFPAK56, Power-SO8

Package / Case

SC-100, SOT-669

DMN2022UFDF-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

7.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

22mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 8V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

907pF @ 10V

FET Feature

-

Power Dissipation (Max)

660mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

U-DFN2020-6 (Type F)

Package / Case

6-UDFN Exposed Pad

Recently Sold

BLM18KG121TN1D

BLM18KG121TN1D

Murata

FERRITE BEAD 120 OHM 0603 1LN

SDP800-500PA

SDP800-500PA

Sensirion AG

SENSOR PRESSURE DIFF

AFT27S010NT1

AFT27S010NT1

NXP

FET RF NCH 65V 2700MHZ PLD1.5W

AD822AN

AD822AN

Analog Devices

IC OPAMP GP 2 CIRCUIT 8DIP

SE5534AN

SE5534AN

ON Semiconductor

IC OPAMP GP 1 CIRCUIT 8DIP

LT1963AEST-1.8#PBF

LT1963AEST-1.8#PBF

Linear Technology/Analog Devices

IC REG LINEAR 1.8V 1.5A SOT223-3

LM2901M

LM2901M

ON Semiconductor

IC COMPARATOR QUAD 14-SOP

744314150

744314150

Wurth Electronics

FIXED IND 1.5UH 13A 4.3 MOHM SMD

IS43TR16128D-125KBLI

IS43TR16128D-125KBLI

ISSI, Integrated Silicon Solution Inc

2G 1.5V DDR3 128MX16 1600MT 96 B

IRF630NPBF

IRF630NPBF

Infineon Technologies

MOSFET N-CH 200V 9.3A TO-220AB

4TPE220MAZB

4TPE220MAZB

Panasonic Electronic Components

CAP TANT POLY 220UF 4V 1411

LQH2MCN100K02L

LQH2MCN100K02L

Murata

FIXED IND 10UH 225MA 1.2 OHM SMD