NDS356AP-NB8L005A
For Reference Only
| Part Number | NDS356AP-NB8L005A |
| PNEDA Part # | NDS356AP-NB8L005A |
| Description | MSOFET N-CH SMD |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 6,462 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 21 - Mar 26 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
NDS356AP-NB8L005A Resources
| Brand | ON Semiconductor |
| ECAD Module |
|
| Mfr. Part Number | NDS356AP-NB8L005A |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- NDS356AP-NB8L005A Datasheet
- where to find NDS356AP-NB8L005A
- ON Semiconductor
- ON Semiconductor NDS356AP-NB8L005A
- NDS356AP-NB8L005A PDF Datasheet
- NDS356AP-NB8L005A Stock
- NDS356AP-NB8L005A Pinout
- Datasheet NDS356AP-NB8L005A
- NDS356AP-NB8L005A Supplier
- ON Semiconductor Distributor
- NDS356AP-NB8L005A Price
- NDS356AP-NB8L005A Distributor
NDS356AP-NB8L005A Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 1.3A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 4.4nC @ 5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 45A (Ta) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 28mOhm @ 22.5A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 25V FET Feature - Power Dissipation (Max) 2.4W (Ta), 125W (Tj) Operating Temperature - Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.6mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 413nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 15660pF @ 15V FET Feature - Power Dissipation (Max) 6.25W (Ta), 104W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 8mOhm @ 90A, 10V Vgs(th) (Max) @ Id 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs 390nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 10900pF @ 25V FET Feature - Power Dissipation (Max) 560W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-264AA (IXFK) Package / Case TO-264-3, TO-264AA |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.2A (Tj) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 80mOhm @ 3.2A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 680pF @ 10V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 1.1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package ChipFET™ Package / Case 8-SMD, Flat Lead |
Manufacturer Infineon Technologies Series Automotive, AEC-Q101, OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 90A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.7mOhm @ 90A, 10V Vgs(th) (Max) @ Id 2.2V @ 90µA Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 13000pF @ 25V FET Feature - Power Dissipation (Max) 150W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3 |
