Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NDD03N60ZT4G

NDD03N60ZT4G

For Reference Only

Part Number NDD03N60ZT4G
PNEDA Part # NDD03N60ZT4G
Description MOSFET N-CH 600V DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,160
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NDD03N60ZT4G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNDD03N60ZT4G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NDD03N60ZT4G, NDD03N60ZT4G Datasheet (Total Pages: 10, Size: 142.16 KB)
PDFNDF03N60ZH Datasheet Cover
NDF03N60ZH Datasheet Page 2 NDF03N60ZH Datasheet Page 3 NDF03N60ZH Datasheet Page 4 NDF03N60ZH Datasheet Page 5 NDF03N60ZH Datasheet Page 6 NDF03N60ZH Datasheet Page 7 NDF03N60ZH Datasheet Page 8 NDF03N60ZH Datasheet Page 9 NDF03N60ZH Datasheet Page 10

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NDD03N60ZT4G Datasheet
  • where to find NDD03N60ZT4G
  • ON Semiconductor

  • ON Semiconductor NDD03N60ZT4G
  • NDD03N60ZT4G PDF Datasheet
  • NDD03N60ZT4G Stock

  • NDD03N60ZT4G Pinout
  • Datasheet NDD03N60ZT4G
  • NDD03N60ZT4G Supplier

  • ON Semiconductor Distributor
  • NDD03N60ZT4G Price
  • NDD03N60ZT4G Distributor

NDD03N60ZT4G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.6Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds312pF @ 25V
FET Feature-
Power Dissipation (Max)61W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

DMTH6010SK3Q-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

16.3A (Ta), 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

38.1nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2841pF @ 30V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252-4L

Package / Case

TO-252-5, DPak (4 Leads + Tab), TO-252AD

IXFH12N120

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.4Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

95nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3400pF @ 25V

FET Feature

-

Power Dissipation (Max)

500W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD (IXFH)

Package / Case

TO-247-3

NTGS3443T1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

65mOhm @ 4.4A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

565pF @ 5V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6

DMT10H015LCG-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

9.4A (Ta), 34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

15mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

33.3nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1871pF @ 50V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

-55°C ~ 155°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

V-DFN3333-8

Package / Case

8-VDFN Exposed Pad

IPP50R140CPXKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

550V

Current - Continuous Drain (Id) @ 25°C

23A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

140mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

3.5V @ 930µA

Gate Charge (Qg) (Max) @ Vgs

64nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2540pF @ 100V

FET Feature

-

Power Dissipation (Max)

192W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

Recently Sold

IXGX120N60B

IXGX120N60B

IXYS

IGBT 600V 200A 660W TO247

MT40A512M16LY-075:E

MT40A512M16LY-075:E

Micron Technology Inc.

IC DRAM 8G PARALLEL 1.33GHZ

GP10J-E3/54

GP10J-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

LT1308BIS8#TRPBF

LT1308BIS8#TRPBF

Linear Technology/Analog Devices

IC REG BST SEPIC ADJ 2A 8SOIC

PCF8593P,112

PCF8593P,112

NXP

IC RTC CLK/CALENDAR I2C 8-DIP

SI4410DYPBF

SI4410DYPBF

Infineon Technologies

MOSFET N-CH 30V 10A 8-SOIC

SP3232EEN-L

SP3232EEN-L

MaxLinear, Inc.

IC TRANSCEIVER FULL 2/2 16SOIC

MAX17048G+T10

MAX17048G+T10

Maxim Integrated

IC FUEL GAUGE LI-ION 1CELL 8TDFN

SI4836DY-T1-E3

SI4836DY-T1-E3

Vishay Siliconix

MOSFET N-CH 12V 17A 8-SOIC

BC848BLT3G

BC848BLT3G

ON Semiconductor

TRANS NPN 30V 0.1A SOT-23

EVQ-PAC09K

EVQ-PAC09K

Panasonic Electronic Components

SWITCH TACTILE SPST-NO 0.02A 15V

FDS4935BZ

FDS4935BZ

ON Semiconductor

MOSFET 2P-CH 30V 6.9A 8-SOIC