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NDD03N60Z-1G

NDD03N60Z-1G

For Reference Only

Part Number NDD03N60Z-1G
PNEDA Part # NDD03N60Z-1G
Description MOSFET N-CH 600V IPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,248
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NDD03N60Z-1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNDD03N60Z-1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NDD03N60Z-1G, NDD03N60Z-1G Datasheet (Total Pages: 10, Size: 142.16 KB)
PDFNDF03N60ZH Datasheet Cover
NDF03N60ZH Datasheet Page 2 NDF03N60ZH Datasheet Page 3 NDF03N60ZH Datasheet Page 4 NDF03N60ZH Datasheet Page 5 NDF03N60ZH Datasheet Page 6 NDF03N60ZH Datasheet Page 7 NDF03N60ZH Datasheet Page 8 NDF03N60ZH Datasheet Page 9 NDF03N60ZH Datasheet Page 10

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NDD03N60Z-1G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.6Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds312pF @ 25V
FET Feature-
Power Dissipation (Max)61W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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