Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

NDBA100N10BT4H

NDBA100N10BT4H

For Reference Only

Part Number NDBA100N10BT4H
PNEDA Part # NDBA100N10BT4H
Description MOSFET N-CH 100V 100A DPAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,618
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NDBA100N10BT4H Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNDBA100N10BT4H
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NDBA100N10BT4H, NDBA100N10BT4H Datasheet (Total Pages: 5, Size: 649.8 KB)
PDFNDBA100N10BT4H Datasheet Cover
NDBA100N10BT4H Datasheet Page 2 NDBA100N10BT4H Datasheet Page 3 NDBA100N10BT4H Datasheet Page 4 NDBA100N10BT4H Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • NDBA100N10BT4H Datasheet
  • where to find NDBA100N10BT4H
  • ON Semiconductor

  • ON Semiconductor NDBA100N10BT4H
  • NDBA100N10BT4H PDF Datasheet
  • NDBA100N10BT4H Stock

  • NDBA100N10BT4H Pinout
  • Datasheet NDBA100N10BT4H
  • NDBA100N10BT4H Supplier

  • ON Semiconductor Distributor
  • NDBA100N10BT4H Price
  • NDBA100N10BT4H Distributor

NDBA100N10BT4H Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V, 15V
Rds On (Max) @ Id, Vgs6.9mOhm @ 50A, 15V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2950pF @ 50V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

IRLI2203N

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

61A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7mOhm @ 37A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

3500pF @ 25V

FET Feature

-

Power Dissipation (Max)

47W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB Full-Pak

Package / Case

TO-220-3 Full Pack

FDB86563-F085

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101, PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

110A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.8mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

163nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10100pF @ 30V

FET Feature

-

Power Dissipation (Max)

333W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRFHM4231TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.4mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.1V @ 35µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1270pF @ 13V

FET Feature

-

Power Dissipation (Max)

2.7W (Ta), 29W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN (3x3)

Package / Case

8-PowerTDFN

FQPF32N20C

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

28A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

82mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2220pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

2N6770T1

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

12A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

500mOhm @ 12A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

120nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

4W (Ta), 150W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-254AA

Package / Case

TO-254-3, TO-254AA (Straight Leads)

Recently Sold

MCP6042-I/SN

MCP6042-I/SN

Microchip Technology

IC OPAMP GP 2 CIRCUIT 8SOIC

SSC9522S

SSC9522S

Sanken

IC CTLR QUASI RES AC/DC 8SOP

CMS05(TE12L,Q,M)

CMS05(TE12L,Q,M)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 5A MFLAT

MC68060RC50

MC68060RC50

NXP

IC MPU M680X0 50MHZ 206PGA

142.6185.5106

142.6185.5106

Littelfuse

FUSE AUTOMOTIVE 10A 58VDC BLADE

MAX238CWG

MAX238CWG

Maxim Integrated

IC TRANSCEIVER FULL 4/4 24SOIC

1N4148-P-TR

1N4148-P-TR

Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 2A DO35

MAX202EEUE

MAX202EEUE

Maxim Integrated

IC TRANSCEIVER FULL 2/2 16TSSOP

CEP125NP-1R0MC-HD

CEP125NP-1R0MC-HD

Sumida

FIXED IND 1UH 16.5A 2.5 MOHM SMD

NUP2201MR6T1G

NUP2201MR6T1G

ON Semiconductor

TVS DIODE 5V 20V 6TSOP

MT8870DSR1

MT8870DSR1

Microchip Technology

IC RECEIVER DTMF 18SOIC

687ALG025MGBJ

687ALG025MGBJ

Illinois Capacitor

CAP ALUM POLY 680UF 20% 25V T/H