NCV57000DWR2G
For Reference Only
| Part Number | NCV57000DWR2G | ||||||||||||||||||
| PNEDA Part # | NCV57000DWR2G | ||||||||||||||||||
| Description | IC IGBT GATE DRIVER | ||||||||||||||||||
| Manufacturer | ON Semiconductor | ||||||||||||||||||
| Unit Price |
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| In Stock | 2,476 | ||||||||||||||||||
| Warehouses | Shipped from Hong Kong SAR | ||||||||||||||||||
| Estimated Delivery | Apr 5 - Apr 10 (Choose Expedited Shipping) | ||||||||||||||||||
| Guarantee | Up to 1 year [PNEDA-Warranty]* | ||||||||||||||||||
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NCV57000DWR2G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NCV57000DWR2G |
| Category | Semiconductors › Power Management ICs › PMIC - Gate Drivers |
| Datasheet |
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NCV57000DWR2G Specifications
| Manufacturer | ON Semiconductor |
| Series | Automotive, AEC-Q100 |
| Driven Configuration | Half-Bridge |
| Channel Type | Single |
| Number of Drivers | 1 |
| Gate Type | IGBT |
| Voltage - Supply | 24V |
| Logic Voltage - VIL, VIH | - |
| Current - Peak Output (Source, Sink) | 7.8A, 7.1A |
| Input Type | Inverting, Non-Inverting |
| High Side Voltage - Max (Bootstrap) | - |
| Rise / Fall Time (Typ) | 10ns, 15ns |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 16-SOIC (0.295", 7.50mm Width) |
| Supplier Device Package | 16-SOIC |
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Manufacturer Infineon Technologies Series - Driven Configuration Half-Bridge Channel Type Synchronous Number of Drivers 2 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 10V ~ 20V Logic Voltage - VIL, VIH 0.8V, 2.5V Current - Peak Output (Source, Sink) 290mA, 600mA Input Type Non-Inverting High Side Voltage - Max (Bootstrap) 600V Rise / Fall Time (Typ) 100ns, 35ns Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case 8-DIP (0.300", 7.62mm) Supplier Device Package 8-PDIP |
Manufacturer ON Semiconductor Series - Driven Configuration Half-Bridge Channel Type Independent Number of Drivers 2 Gate Type N-Channel, P-Channel MOSFET Voltage - Supply 8V ~ 27V Logic Voltage - VIL, VIH 0.8V, 2.25V Current - Peak Output (Source, Sink) 1A, 1.5A Input Type Inverting, Non-Inverting High Side Voltage - Max (Bootstrap) - Rise / Fall Time (Typ) 21ns, 8ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
Manufacturer Infineon Technologies Series - Driven Configuration Half-Bridge Channel Type Independent Number of Drivers 2 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 10V ~ 20V Logic Voltage - VIL, VIH 0.8V, 2.7V Current - Peak Output (Source, Sink) 200mA, 350mA Input Type Inverting High Side Voltage - Max (Bootstrap) 600V Rise / Fall Time (Typ) 150ns, 50ns Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case 14-DIP (0.300", 7.62mm) Supplier Device Package 14-DIP |
Manufacturer Infineon Technologies Series - Driven Configuration Half-Bridge Channel Type 3-Phase Number of Drivers 6 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 10V ~ 20V Logic Voltage - VIL, VIH 0.8V, 2.2V Current - Peak Output (Source, Sink) 250mA, 500mA Input Type Inverting High Side Voltage - Max (Bootstrap) 600V Rise / Fall Time (Typ) 80ns, 35ns Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case 28-DIP (0.600", 15.24mm) Supplier Device Package 28-PDIP |
