NCP81075DR2G
For Reference Only
| Part Number | NCP81075DR2G |
| PNEDA Part # | NCP81075DR2G |
| Description | HIGH PERFORMANCE DUAL MOS |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 7,668 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NCP81075DR2G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | NCP81075DR2G |
| Category | Semiconductors › Power Management ICs › PMIC - Gate Drivers |
| Datasheet |
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NCP81075DR2G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Driven Configuration | High-Side or Low-Side |
| Channel Type | Independent |
| Number of Drivers | 2 |
| Gate Type | N-Channel MOSFET |
| Voltage - Supply | 8.5V ~ 20V |
| Logic Voltage - VIL, VIH | 0.8V, 2.7V |
| Current - Peak Output (Source, Sink) | 4A, 4A |
| Input Type | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 200V |
| Rise / Fall Time (Typ) | 8ns, 7ns |
| Operating Temperature | -40°C ~ 140°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
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Manufacturer IXYS Integrated Circuits Division Series - Driven Configuration Low-Side Channel Type Single Number of Drivers 1 Gate Type IGBT, N-Channel, P-Channel MOSFET Voltage - Supply 12.5V ~ 35V Logic Voltage - VIL, VIH 0.8V, 3.5V Current - Peak Output (Source, Sink) 30A, 30A Input Type Non-Inverting High Side Voltage - Max (Bootstrap) - Rise / Fall Time (Typ) 11ns, 11ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-263-6, D²Pak (5 Leads + Tab), TO-263BA Supplier Device Package TO-263-5 |
