NAND256R3A2BZA6E
For Reference Only
| Part Number | NAND256R3A2BZA6E |
| PNEDA Part # | NAND256R3A2BZA6E |
| Description | IC FLASH 256M PARALLEL 55VFBGA |
| Manufacturer | Micron Technology Inc. |
| Unit Price | Request a Quote |
| In Stock | 6,994 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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NAND256R3A2BZA6E Resources
| Brand | Micron Technology Inc. |
| ECAD Module |
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| Mfr. Part Number | NAND256R3A2BZA6E |
| Category | Semiconductors › Memory ICs › Memory |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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NAND256R3A2BZA6E Specifications
| Manufacturer | Micron Technology Inc. |
| Series | - |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 256Mb (32M x 8) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | 50ns |
| Access Time | 50ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 55-TFBGA |
| Supplier Device Package | 55-VFBGA (8x10) |
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Manufacturer Cypress Semiconductor Corp Series HyperRAM™ KL Memory Type Volatile Memory Format PSRAM Technology PSRAM (Pseudo SRAM) Memory Size 64Mb (8M x 8) Memory Interface Parallel Clock Frequency 100MHz Write Cycle Time - Word, Page - Access Time 40ns Voltage - Supply 2.7V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 24-VBGA Supplier Device Package 24-FBGA (6x8) |
