MURS120HE3_A/H
For Reference Only
| Part Number | MURS120HE3_A/H |
| PNEDA Part # | MURS120HE3_A-H |
| Description | DIODE GEN PURP 200V 2A DO214AA |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 6,282 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 21 - Apr 26 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MURS120HE3_A/H Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | MURS120HE3_A/H |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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MURS120HE3_A/H Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | Automotive, AEC-Q101 |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Current - Average Rectified (Io) | 2A |
| Voltage - Forward (Vf) (Max) @ If | 875mV @ 1A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35ns |
| Current - Reverse Leakage @ Vr | 2µA @ 200V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AA, SMB |
| Supplier Device Package | DO-214AA (SMB) |
| Operating Temperature - Junction | -65°C ~ 175°C |
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Manufacturer STMicroelectronics Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 20A Voltage - Forward (Vf) (Max) @ If 900mV @ 20A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 30µA @ 100V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB Operating Temperature - Junction 150°C (Max) |
Manufacturer Global Power Technologies Group Series Amp+™ Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 650V Current - Average Rectified (Io) 30A (DC) Voltage - Forward (Vf) (Max) @ If 1.65V @ 10A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 100µA @ 650V Capacitance @ Vr, F 527pF @ 1V, 1MHz Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220-2 Operating Temperature - Junction -55°C ~ 175°C |
