MURS120-M3/5BT
For Reference Only
| Part Number | MURS120-M3/5BT |
| PNEDA Part # | MURS120-M3-5BT |
| Description | DIODE GEN PURP 200V 1A DO214AA |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 2,538 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MURS120-M3/5BT Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | MURS120-M3/5BT |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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MURS120-M3/5BT Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 875mV @ 1A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35ns |
| Current - Reverse Leakage @ Vr | 2µA @ 200V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AA, SMB |
| Supplier Device Package | DO-214AA (SMB) |
| Operating Temperature - Junction | -65°C ~ 175°C |
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Manufacturer GeneSiC Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 6A Voltage - Forward (Vf) (Max) @ If 1.4V @ 6A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 500ns Current - Reverse Leakage @ Vr 25µA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -65°C ~ 150°C |
Manufacturer Taiwan Semiconductor Corporation Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 30V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 875mV @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 500µA @ 30V Capacitance @ Vr, F 110pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-213AB, MELF Supplier Device Package MELF Operating Temperature - Junction -65°C ~ 125°C |
