Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

MUN5334DW1T1G

MUN5334DW1T1G

For Reference Only

Part Number MUN5334DW1T1G
PNEDA Part # MUN5334DW1T1G
Description TRANS PREBIAS NPN/PNP SOT363
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,100
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

MUN5334DW1T1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberMUN5334DW1T1G
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
MUN5334DW1T1G, MUN5334DW1T1G Datasheet (Total Pages: 7, Size: 145.23 KB)
PDFNSVB124XPDXV6T1G Datasheet Cover
NSVB124XPDXV6T1G Datasheet Page 2 NSVB124XPDXV6T1G Datasheet Page 3 NSVB124XPDXV6T1G Datasheet Page 4 NSVB124XPDXV6T1G Datasheet Page 5 NSVB124XPDXV6T1G Datasheet Page 6 NSVB124XPDXV6T1G Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • MUN5334DW1T1G Datasheet
  • where to find MUN5334DW1T1G
  • ON Semiconductor

  • ON Semiconductor MUN5334DW1T1G
  • MUN5334DW1T1G PDF Datasheet
  • MUN5334DW1T1G Stock

  • MUN5334DW1T1G Pinout
  • Datasheet MUN5334DW1T1G
  • MUN5334DW1T1G Supplier

  • ON Semiconductor Distributor
  • MUN5334DW1T1G Price
  • MUN5334DW1T1G Distributor

MUN5334DW1T1G Specifications

ManufacturerON Semiconductor
Series-
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)22kOhms
Resistor - Emitter Base (R2)47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max250mW
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88/SC70-6/SOT-363

The Products You May Be Interested In

RN2907,LF(CT

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

*

Transistor Type

-

Current - Collector (Ic) (Max)

-

Voltage - Collector Emitter Breakdown (Max)

-

Resistor - Base (R1)

-

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

-

Vce Saturation (Max) @ Ib, Ic

-

Current - Collector Cutoff (Max)

-

Frequency - Transition

-

Power - Max

-

Mounting Type

-

Package / Case

-

Supplier Device Package

-

RN4601(TE85L,F)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7kOhms

Resistor - Emitter Base (R2)

4.7kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

30 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

250MHz

Power - Max

300mW

Mounting Type

Surface Mount

Package / Case

SC-74, SOT-457

Supplier Device Package

SM6

NSBC123JPDXV6T1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

500mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SOT-563

NSVTB60BDW1T1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

Transistor Type

1 NPN Pre-Biased, 1 PNP

Current - Collector (Ic) (Max)

150mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

22kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 5mA, 10V / 120 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-88/SC70-6/SOT-363

RN2963(TE85L,F)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

2 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

22kOhms

Resistor - Emitter Base (R2)

22kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 10mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 250µA, 5mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

200MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

US6

Recently Sold

0154007.DR

0154007.DR

Littelfuse

FUSE BRD MNT 7A 125VAC/VDC 2SMD

MT48LC4M16A2P-75 IT:G

MT48LC4M16A2P-75 IT:G

Micron Technology Inc.

IC DRAM 64M PARALLEL 54TSOP

RO-0505S

RO-0505S

Recom Power

DC DC CONVERTER 5V 1W

AD5293BRUZ-20

AD5293BRUZ-20

Analog Devices

IC DGT POT 20KOHM 1024TP 14TSSOP

AT28C16-15PC

AT28C16-15PC

Microchip Technology

IC EEPROM 16K PARALLEL 24DIP

CY37064P44-125JXC

CY37064P44-125JXC

Cypress Semiconductor

IC CPLD 64MC 10NS 44PLCC

MT41K256M16HA-125 IT:E

MT41K256M16HA-125 IT:E

Micron Technology Inc.

IC DRAM 4G PARALLEL 96FBGA

ADP2164ACPZ-1.8-R7

ADP2164ACPZ-1.8-R7

Analog Devices

IC REG BUCK 1.8V 4A 16LFCSP

1N4148WS

1N4148WS

ON Semiconductor

DIODE GEN PURP 75V 150MA SOD323F

SI4368DY-T1-E3

SI4368DY-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 17A 8-SOIC

ADG849YKSZ-REEL7

ADG849YKSZ-REEL7

Analog Devices

IC SWITCH SPDT SC70-6

MC33990D

MC33990D

NXP

IC TRANSCEIVER HALF 1/1 8SOIC