MTA4ATF51264HZ-2G6E1
For Reference Only
| Part Number | MTA4ATF51264HZ-2G6E1 |
| PNEDA Part # | MTA4ATF51264HZ-2G6E1 |
| Description | IC DRAM 32G PARALLEL 1333MHZ |
| Manufacturer | Micron Technology Inc. |
| Unit Price | Request a Quote |
| In Stock | 3,294 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MTA4ATF51264HZ-2G6E1 Resources
| Brand | Micron Technology Inc. |
| ECAD Module |
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| Mfr. Part Number | MTA4ATF51264HZ-2G6E1 |
| Category | Semiconductors › Memory ICs › Memory |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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MTA4ATF51264HZ-2G6E1 Specifications
| Manufacturer | Micron Technology Inc. |
| Series | - |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR4 |
| Memory Size | 32Gb (512M x 64) |
| Memory Interface | Parallel |
| Clock Frequency | 1333MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | - |
| Voltage - Supply | 1.2V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
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Manufacturer STMicroelectronics Series - Memory Type Non-Volatile Memory Format NVSRAM Technology NVSRAM (Non-Volatile SRAM) Memory Size 4Mb (512K x 8) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 70ns Access Time 70ns Voltage - Supply 4.75V ~ 5.5V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Through Hole Package / Case 32-DIP Module (0.600", 15.24mm) Supplier Device Package 32-PMDIP Module |
