MT40A1G8WE-083E AAT:B
For Reference Only
| Part Number | MT40A1G8WE-083E AAT:B |
| PNEDA Part # | MT40A1G8WE-083E-AAT-B |
| Description | IC DRAM 8G PARALLEL 1.2GHZ |
| Manufacturer | Micron Technology Inc. |
| Unit Price | Request a Quote |
| In Stock | 7,488 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 5 - Apr 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MT40A1G8WE-083E AAT:B Resources
| Brand | Micron Technology Inc. |
| ECAD Module |
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| Mfr. Part Number | MT40A1G8WE-083E AAT:B |
| Category | Semiconductors › Memory ICs › Memory |
| Datasheet |
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Logistics Mode
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MT40A1G8WE-083E AAT:B Specifications
| Manufacturer | Micron Technology Inc. |
| Series | - |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR4 |
| Memory Size | 8Gb (1G x 8) |
| Memory Interface | Parallel |
| Clock Frequency | 1.2GHz |
| Write Cycle Time - Word, Page | - |
| Access Time | - |
| Voltage - Supply | 1.14V ~ 1.26V |
| Operating Temperature | -40°C ~ 105°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 78-TFBGA |
| Supplier Device Package | 78-FBGA (8x12) |
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Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 18Mb (1M x 18) Memory Interface Parallel Clock Frequency 250MHz Write Cycle Time - Word, Page - Access Time 2.6ns Voltage - Supply 2.375V ~ 2.625V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-LQFP (14x20) |
