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MT3S111P(TE12L,F)

MT3S111P(TE12L,F)

For Reference Only

Part Number MT3S111P(TE12L,F)
PNEDA Part # MT3S111P-TE12L-F
Description RF TRANS NPN 6V 8GHZ PW-MINI
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 49,482
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 19 - Mar 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

MT3S111P(TE12L Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberMT3S111P(TE12L,F)
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF

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MT3S111P(TE12L Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)6V
Frequency - Transition8GHz
Noise Figure (dB Typ @ f)1.25dB @ 1GHz
Gain10.5dB
Power - Max1W
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 30mA, 5V
Current - Collector (Ic) (Max)100mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-243AA
Supplier Device PackagePW-MINI

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1.03GHz ~ 1.09GHz

Noise Figure (dB Typ @ f)

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