MT3S111P(TE12L,F)
For Reference Only
| Part Number | MT3S111P(TE12L,F) |
| PNEDA Part # | MT3S111P-TE12L-F |
| Description | RF TRANS NPN 6V 8GHZ PW-MINI |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 49,482 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 20 - Mar 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
MT3S111P(TE12L Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
|
| Mfr. Part Number | MT3S111P(TE12L,F) |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- MT3S111P(TE12L,F) Datasheet
- where to find MT3S111P(TE12L,F)
- Toshiba Semiconductor and Storage
- Toshiba Semiconductor and Storage MT3S111P(TE12L,F)
- MT3S111P(TE12L,F) PDF Datasheet
- MT3S111P(TE12L,F) Stock
- MT3S111P(TE12L,F) Pinout
- Datasheet MT3S111P(TE12L,F)
- MT3S111P(TE12L,F) Supplier
- Toshiba Semiconductor and Storage Distributor
- MT3S111P(TE12L,F) Price
- MT3S111P(TE12L,F) Distributor
MT3S111P(TE12L Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 1.25dB @ 1GHz |
| Gain | 10.5dB |
| Power - Max | 1W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 30mA, 5V |
| Current - Collector (Ic) (Max) | 100mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Supplier Device Package | PW-MINI |
The Products You May Be Interested In
|
Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 55V Frequency - Transition 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f) - Gain 6.5dB Power - Max 1450W DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 1A, 5V Current - Collector (Ic) (Max) 40A Operating Temperature 200°C (TJ) Mounting Type Chassis Mount Package / Case 55KT Supplier Device Package 55KT |
Manufacturer CEL Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 3.3V Frequency - Transition 21GHz Noise Figure (dB Typ @ f) 1.2dB @ 2GHz Gain 12.5dB Power - Max 115mW DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 2V Current - Collector (Ic) (Max) 35mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-523 Supplier Device Package - |
Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 55V Frequency - Transition 30MHz Noise Figure (dB Typ @ f) - Gain 14dB Power - Max 233W DC Current Gain (hFE) (Min) @ Ic, Vce 18 @ 1.4A, 6V Current - Collector (Ic) (Max) 10A Operating Temperature 200°C (TJ) Mounting Type Chassis Mount Package / Case M174 Supplier Device Package M174 |
Manufacturer Microsemi Corporation Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 55V Frequency - Transition 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f) - Gain 7.8dB Power - Max 75W DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1A, 5V Current - Collector (Ic) (Max) 3.5A Operating Temperature 250°C (TJ) Mounting Type Chassis Mount Package / Case M214 Supplier Device Package M214 |
Manufacturer Central Semiconductor Corp Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 1.2GHz Noise Figure (dB Typ @ f) 3dB @ 200MHz Gain - Power - Max 1W DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 50mA, 15V Current - Collector (Ic) (Max) 400mA Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-205AD, TO-39-3 Metal Can Supplier Device Package TO-39 |
