MT29F3T08EUCBBM4-37ES:B TR
For Reference Only
| Part Number | MT29F3T08EUCBBM4-37ES:B TR |
| PNEDA Part # | MT29F3T08EUCBBM4-37ES-B-TR |
| Description | IC FLASH 3T PARALLEL 267MHZ |
| Manufacturer | Micron Technology Inc. |
| Unit Price | Request a Quote |
| In Stock | 4,374 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Dec 30 - Jan 4 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MT29F3T08EUCBBM4-37ES:B TR Resources
| Brand | Micron Technology Inc. |
| ECAD Module |
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| Mfr. Part Number | MT29F3T08EUCBBM4-37ES:B TR |
| Category | Semiconductors › Memory ICs › Memory |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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MT29F3T08EUCBBM4-37ES:B TR Specifications
| Manufacturer | Micron Technology Inc. |
| Series | - |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 3Tb (384G x 8) |
| Memory Interface | Parallel |
| Clock Frequency | 267MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | - |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
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Manufacturer ISSI, Integrated Silicon Solution Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 36Mb (1M x 36) Memory Interface Parallel Clock Frequency 166MHz Write Cycle Time - Word, Page - Access Time 3.8ns Voltage - Supply 3.135V ~ 3.465V Operating Temperature -40°C ~ 125°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-LQFP (14x20) |
