MT29F2G08ABAEAH4-ITE:E TR
For Reference Only
| Part Number | MT29F2G08ABAEAH4-ITE:E TR |
| PNEDA Part # | MT29F2G08ABAEAH4-ITE-E-TR |
| Description | IC FLASH 2G PARALLEL 63VFBGA |
| Manufacturer | Micron Technology Inc. |
| Unit Price | Request a Quote |
| In Stock | 5,004 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MT29F2G08ABAEAH4-ITE:E TR Resources
| Brand | Micron Technology Inc. |
| ECAD Module |
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| Mfr. Part Number | MT29F2G08ABAEAH4-ITE:E TR |
| Category | Semiconductors › Memory ICs › Memory |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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MT29F2G08ABAEAH4-ITE:E TR Specifications
| Manufacturer | Micron Technology Inc. |
| Series | - |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 2Gb (256M x 8) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | - |
| Access Time | - |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 63-VFBGA |
| Supplier Device Package | 63-VFBGA (9x11) |
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Manufacturer Micron Technology Inc. Series - Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR Memory Size 512Mb (128M x 4) Memory Interface Parallel Clock Frequency 133MHz Write Cycle Time - Word, Page 15ns Access Time 750ps Voltage - Supply 2.3V ~ 2.7V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package 66-TSOP |
Manufacturer Micron Technology Inc. Series - Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 1Gb (128M x 8, 64M x 16) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 110ns Access Time 110ns Voltage - Supply 2.7V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package 56-TSOP |
Manufacturer Alliance Memory, Inc. Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 64Kb (8K x 8) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 70ns Access Time 70ns Voltage - Supply 4.5V ~ 5.5V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Through Hole Package / Case 28-DIP (0.600", 15.24mm) Supplier Device Package 28-PDIP |
Manufacturer Microchip Technology Series - Memory Type Non-Volatile Memory Format EEPROM Technology EEPROM Memory Size 256Kb (32K x 8) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 10ms Access Time 200ns Voltage - Supply 3V ~ 3.6V Operating Temperature -40°C ~ 85°C (TC) Mounting Type Surface Mount Package / Case 28-TSSOP (0.465", 11.80mm Width) Supplier Device Package 28-TSOP |
