MT29F1G08ABAEAWP-IT:E
For Reference Only
| Part Number | MT29F1G08ABAEAWP-IT:E |
| PNEDA Part # | MT29F1G08ABAEAWP-IT-E |
| Description | IC FLASH 1G PARALLEL 48TSOP |
| Manufacturer | Micron Technology Inc. |
| Unit Price | Request a Quote |
| In Stock | 7,697 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MT29F1G08ABAEAWP-IT:E Resources
| Brand | Micron Technology Inc. |
| ECAD Module |
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| Mfr. Part Number | MT29F1G08ABAEAWP-IT:E |
| Category | Semiconductors › Memory ICs › Memory |
Payment Method
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- Some orders may require a minimum amount of $100.00.
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
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Notes
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MT29F1G08ABAEAWP-IT:E Specifications
| Manufacturer | Micron Technology Inc. |
| Series | - |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 1Gb (128M x 8) |
| Memory Interface | Parallel |
| Clock Frequency | - |
| Write Cycle Time - Word, Page | - |
| Access Time | - |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 48-TSOP I |
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Manufacturer IDT, Integrated Device Technology Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Dual Port, Synchronous Memory Size 4.5Mb (128K x 36) Memory Interface Parallel Clock Frequency 166MHz Write Cycle Time - Word, Page - Access Time 3.6ns Voltage - Supply 3.15V ~ 3.45V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 256-LBGA Supplier Device Package 256-CABGA (17x17) |
Manufacturer IDT, Integrated Device Technology Inc Series - Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 9Mb (512K x 18) Memory Interface Parallel Clock Frequency 166MHz Write Cycle Time - Word, Page - Access Time 3.5ns Voltage - Supply 3.135V ~ 3.465V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 165-TBGA Supplier Device Package 165-CABGA (13x15) |
