MSRT200160(A)D
For Reference Only
| Part Number | MSRT200160(A)D |
| PNEDA Part # | MSRT200160-A-D |
| Description | DIODE GEN 1.6KV 200A 3 TOWER |
| Manufacturer | GeneSiC Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 7,740 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 17 - Mar 22 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MSRT200160(A)D Resources
| Brand | GeneSiC Semiconductor |
| ECAD Module |
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| Mfr. Part Number | MSRT200160(A)D |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Arrays |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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MSRT200160(A)D Specifications
| Manufacturer | GeneSiC Semiconductor |
| Series | - |
| Diode Configuration | 1 Pair Series Connection |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1600V |
| Current - Average Rectified (Io) (per Diode) | 200A |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 200A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 10µA @ 1600V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Mounting Type | Chassis Mount |
| Package / Case | Three Tower |
| Supplier Device Package | Three Tower |
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Manufacturer GeneSiC Semiconductor Series - Diode Configuration - Diode Type Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) (per Diode) 100A (DC) Voltage - Forward (Vf) (Max) @ If 1.35V @ 50A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 90ns Current - Reverse Leakage @ Vr 25µA @ 50V Operating Temperature - Junction -40°C ~ 175°C Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) (per Diode) 500A (DC) Voltage - Forward (Vf) (Max) @ If 800mV @ 250A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 20V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
