MSD2714AT1G
For Reference Only
| Part Number | MSD2714AT1G |
| PNEDA Part # | MSD2714AT1G |
| Description | RF TRANS NPN 25V 650MHZ SC59 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 6,426 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Feb 18 - Feb 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MSD2714AT1G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | MSD2714AT1G |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
| Datasheet |
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MSD2714AT1G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| Frequency - Transition | 650MHz |
| Noise Figure (dB Typ @ f) | - |
| Gain | - |
| Power - Max | 225mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 1mA, 6V |
| Current - Collector (Ic) (Max) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SC-59 |
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Manufacturer CEL Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 6V Frequency - Transition 4.5GHz Noise Figure (dB Typ @ f) 1.7dB ~ 2.5dB @ 2GHz Gain - Power - Max 200mW DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 3mA, 1V Current - Collector (Ic) (Max) 100mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23 |
Manufacturer Central Semiconductor Corp Series - Transistor Type PNP Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) - Gain - Power - Max 225mW DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23 |
