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MS2321A

MS2321A

For Reference Only

Part Number MS2321A
PNEDA Part # MS2321A
Description RF POWER TRANSISTOR
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 3,400
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

MS2321A Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberMS2321A
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF

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MS2321A Specifications

ManufacturerMicrosemi Corporation
Series-
Transistor Type-
Voltage - Collector Emitter Breakdown (Max)-
Frequency - Transition-
Noise Figure (dB Typ @ f)-
Gain-
Power - Max-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Current - Collector (Ic) (Max)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

The Products You May Be Interested In

Manufacturer

NXP USA Inc.

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

10V

Frequency - Transition

8.5GHz

Noise Figure (dB Typ @ f)

1.5dB ~ 2.1dB @ 1GHz ~ 2GHz

Gain

-

Power - Max

250mW

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 5mA, 6V

Current - Collector (Ic) (Max)

50mA

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

SOT-323-3

MDS800

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

65V

Frequency - Transition

1.09GHz

Noise Figure (dB Typ @ f)

-

Gain

8.6dB

Power - Max

1458W

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 1A, 5V

Current - Collector (Ic) (Max)

60A

Operating Temperature

200°C (TJ)

Mounting Type

Chassis Mount

Package / Case

55ST-1

Supplier Device Package

55ST-1

64017H

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Transistor Type

-

Voltage - Collector Emitter Breakdown (Max)

-

Frequency - Transition

-

Noise Figure (dB Typ @ f)

-

Gain

-

Power - Max

-

DC Current Gain (hFE) (Min) @ Ic, Vce

-

Current - Collector (Ic) (Max)

-

Operating Temperature

-

Mounting Type

-

Package / Case

-

Supplier Device Package

-

2SC5096-R,LF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

10V

Frequency - Transition

10GHz

Noise Figure (dB Typ @ f)

1.4dB @ 1GHz

Gain

1.4dB

Power - Max

100mW

DC Current Gain (hFE) (Min) @ Ic, Vce

50 @ 7mA, 6V

Current - Collector (Ic) (Max)

15mA

Operating Temperature

125°C (TJ)

Mounting Type

Surface Mount

Package / Case

SC-75, SOT-416

Supplier Device Package

SSM

HFA3096BZ96

Renesas Electronics America Inc.

Manufacturer

Renesas Electronics America Inc.

Series

-

Transistor Type

3 NPN + 2 PNP

Voltage - Collector Emitter Breakdown (Max)

12V, 15V

Frequency - Transition

8GHz, 5.5GHz

Noise Figure (dB Typ @ f)

3.5dB @ 1GHz

Gain

-

Power - Max

150mW

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 10mA, 2V / 20 @ 10mA, 2V

Current - Collector (Ic) (Max)

65mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

16-SOIC (0.154", 3.90mm Width)

Supplier Device Package

16-SOIC

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