MRF5812M
For Reference Only
| Part Number | MRF5812M |
| PNEDA Part # | MRF5812M |
| Description | TRANS NPN 15V 200MA |
| Manufacturer | Microsemi |
| Unit Price | Request a Quote |
| In Stock | 3,258 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 4 - Apr 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MRF5812M Resources
| Brand | Microsemi |
| ECAD Module |
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| Mfr. Part Number | MRF5812M |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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MRF5812M Specifications
| Manufacturer | Microsemi Corporation |
| Series | - |
| Transistor Type | - |
| Voltage - Collector Emitter Breakdown (Max) | - |
| Frequency - Transition | - |
| Noise Figure (dB Typ @ f) | - |
| Gain | - |
| Power - Max | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Current - Collector (Ic) (Max) | - |
| Operating Temperature | - |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
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Manufacturer Infineon Technologies Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 2.8V Frequency - Transition 65GHz Noise Figure (dB Typ @ f) 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz Gain 21.5dB Power - Max 185mW DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 50mA, 1.5V Current - Collector (Ic) (Max) 80mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SC-82A, SOT-343 Supplier Device Package PG-SOT343-4 |
Manufacturer NXP USA Inc. Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 10V Frequency - Transition 8GHz Noise Figure (dB Typ @ f) 1.3dB ~ 3dB @ 1GHz ~ 2GHz Gain - Power - Max 300mW DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 15mA, 5V Current - Collector (Ic) (Max) 50mA Operating Temperature 175°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package TO-236AB (SOT23) |
