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MRF455

MRF455

For Reference Only

Part Number MRF455
PNEDA Part # MRF455
Description RF TRANS NPN 18V 211-07
Manufacturer M/A-Com Technology Solutions
Unit Price Request a Quote
In Stock 6,120
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

MRF455 Resources

Brand M/A-Com Technology Solutions
ECAD Module ECAD
Mfr. Part NumberMRF455
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF
Datasheet
MRF455, MRF455 Datasheet (Total Pages: 5, Size: 508.89 KB)
PDFMRF455 Datasheet Cover
MRF455 Datasheet Page 2 MRF455 Datasheet Page 3 MRF455 Datasheet Page 4 MRF455 Datasheet Page 5

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MRF455 Specifications

ManufacturerM/A-Com Technology Solutions
Series-
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)18V
Frequency - Transition-
Noise Figure (dB Typ @ f)-
Gain13dB
Power - Max60W
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 5A, 5V
Current - Collector (Ic) (Max)15A
Operating Temperature-
Mounting TypeChassis Mount
Package / Case211-07
Supplier Device Package211-07, STYLE 1

The Products You May Be Interested In

Manufacturer

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Series

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Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

2.1dB ~ 3dB @ 1GHz ~ 2GHz

Gain

-

Power - Max

300mW

DC Current Gain (hFE) (Min) @ Ic, Vce

65 @ 15mA, 10V

Current - Collector (Ic) (Max)

25mA

Operating Temperature

150°C (TJ)

Mounting Type

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Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

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Manufacturer

CEL

Series

-

Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

6V

Frequency - Transition

11GHz

Noise Figure (dB Typ @ f)

1.15dB @ 1GHz

Gain

13.5dB

Power - Max

150mW

DC Current Gain (hFE) (Min) @ Ic, Vce

85 @ 5mA, 5V

Current - Collector (Ic) (Max)

100mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

SOT-323

Manufacturer

NXP USA Inc.

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

12V

Frequency - Transition

6GHz

Noise Figure (dB Typ @ f)

1.7dB ~ 2.3dB @ 1GHz ~ 2GHz

Gain

-

Power - Max

300mW

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 30mA, 5V

Current - Collector (Ic) (Max)

35mA

Operating Temperature

175°C (TJ)

Mounting Type

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Package / Case

TO-253-4, TO-253AA

Supplier Device Package

SOT-143B

BF240_J35Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

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Frequency - Transition

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Noise Figure (dB Typ @ f)

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Gain

-

Power - Max

350mW

DC Current Gain (hFE) (Min) @ Ic, Vce

65 @ 1mA, 10V

Current - Collector (Ic) (Max)

50mA

Operating Temperature

-

Mounting Type

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Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

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UPA811T-A

CEL

Manufacturer

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Series

-

Transistor Type

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Voltage - Collector Emitter Breakdown (Max)

10V

Frequency - Transition

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Noise Figure (dB Typ @ f)

1.9dB @ 2GHz

Gain

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Power - Max

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Current - Collector (Ic) (Max)

35mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SOT-363

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