MRA4006T3G
For Reference Only
| Part Number | MRA4006T3G |
| PNEDA Part # | MRA4006T3G |
| Description | DIODE GEN PURP 800V 1A SMA |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 936,096 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MRA4006T3G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | MRA4006T3G |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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MRA4006T3G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 800V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 1A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 10µA @ 800V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AC, SMA |
| Supplier Device Package | SMA |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.1V @ 1A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 600ns Current - Reverse Leakage @ Vr 5µA @ 200V Capacitance @ Vr, F 10pF @ 4V, 1MHz Mounting Type Through Hole Package / Case MPG06, Axial Supplier Device Package MPG06 Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer STMicroelectronics Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 20A Voltage - Forward (Vf) (Max) @ If 1.5V @ 20A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 120µA @ 1200V Capacitance @ Vr, F 1650pF @ 0V, 1MHz Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AC Operating Temperature - Junction -40°C ~ 175°C |
Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 30V Current - Average Rectified (Io) 3.3A Voltage - Forward (Vf) (Max) @ If 570mV @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 30V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case C-16, Axial Supplier Device Package C-16 Operating Temperature - Junction -40°C ~ 150°C |
Manufacturer Diodes Incorporated Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 8A Voltage - Forward (Vf) (Max) @ If 2.7V @ 8A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 45ns Current - Reverse Leakage @ Vr 80µA @ 600V Capacitance @ Vr, F 9.3pF @ 40V, 1MHz Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AC Operating Temperature - Junction 150°C (Max) |
