MPS750
For Reference Only
| Part Number | MPS750 |
| PNEDA Part # | MPS750_6B |
| Description | TRANS PNP 40V 2A TO92 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 8,262 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 1 - Apr 6 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MPS750 Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | MPS750 |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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MPS750 Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 2A |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 1A, 2V |
| Power - Max | 625mW |
| Frequency - Transition | 75MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
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Manufacturer ON Semiconductor Series - Transistor Type PNP Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 65V Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA Current - Collector Cutoff (Max) 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V Power - Max 300mW Frequency - Transition 100MHz Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 (TO-236) |
Manufacturer Microsemi Corporation Series Military, MIL-PRF-19500/354 Transistor Type PNP Current - Collector (Ic) (Max) 30mA Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 10nA DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V Power - Max 400mW Frequency - Transition - Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole Package / Case TO-206AB, TO-46-3 Metal Can Supplier Device Package TO-46 (TO-206AB) |
Manufacturer Toshiba Semiconductor and Storage Series - Transistor Type NPN Current - Collector (Ic) (Max) 50mA Voltage - Collector Emitter Breakdown (Max) 150V Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA, 5V Power - Max 800mW Frequency - Transition 120MHz Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Long Body Supplier Device Package TO-92MOD |
