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MMIX1Y100N120C3H1

MMIX1Y100N120C3H1

For Reference Only

Part Number MMIX1Y100N120C3H1
PNEDA Part # MMIX1Y100N120C3H1
Description IGBT 1200V 92A 400W SMPD
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,150
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 18 - Feb 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

MMIX1Y100N120C3H1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberMMIX1Y100N120C3H1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
MMIX1Y100N120C3H1, MMIX1Y100N120C3H1 Datasheet (Total Pages: 7, Size: 235.39 KB)
PDFMMIX1Y100N120C3H1 Datasheet Cover
MMIX1Y100N120C3H1 Datasheet Page 2 MMIX1Y100N120C3H1 Datasheet Page 3 MMIX1Y100N120C3H1 Datasheet Page 4 MMIX1Y100N120C3H1 Datasheet Page 5 MMIX1Y100N120C3H1 Datasheet Page 6 MMIX1Y100N120C3H1 Datasheet Page 7

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MMIX1Y100N120C3H1 Specifications

ManufacturerIXYS
SeriesGenX3™, XPT™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)92A
Current - Collector Pulsed (Icm)440A
Vce(on) (Max) @ Vge, Ic3.5V @ 15V, 100A
Power - Max400W
Switching Energy6.5mJ (on), 2.9mJ (off)
Input TypeStandard
Gate Charge270nC
Td (on/off) @ 25°C48ns/123ns
Test Condition600V, 100A, 1Ohm, 15V
Reverse Recovery Time (trr)420ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / Case24-PowerSMD, 21 Leads
Supplier Device Package24-SMPD

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Td (on/off) @ 25°C

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Test Condition

400V, 15A, 20Ohm, 15V

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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ON Semiconductor

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Td (on/off) @ 25°C

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Test Condition

400V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

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ON Semiconductor

Manufacturer

ON Semiconductor

Series

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IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

5.3A

Current - Collector Pulsed (Icm)

6A

Vce(on) (Max) @ Vge, Ic

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Power - Max

60W

Switching Energy

70µJ (on), 90µJ (off)

Input Type

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Gate Charge

14nC

Td (on/off) @ 25°C

15ns/67ns

Test Condition

960V, 1A, 82Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

TO-252AA

SGP04N60XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

NPT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

9.4A

Current - Collector Pulsed (Icm)

19A

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 4A

Power - Max

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Switching Energy

131µJ

Input Type

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Gate Charge

24nC

Td (on/off) @ 25°C

22ns/237ns

Test Condition

400V, 4A, 67Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Supplier Device Package

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