Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

MMIX1F360N15T2

MMIX1F360N15T2

For Reference Only

Part Number MMIX1F360N15T2
PNEDA Part # MMIX1F360N15T2
Description MOSFET N-CH 150V 235A
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,938
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 20 - Apr 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

MMIX1F360N15T2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberMMIX1F360N15T2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
MMIX1F360N15T2, MMIX1F360N15T2 Datasheet (Total Pages: 7, Size: 234.93 KB)
PDFMMIX1F360N15T2 Datasheet Cover
MMIX1F360N15T2 Datasheet Page 2 MMIX1F360N15T2 Datasheet Page 3 MMIX1F360N15T2 Datasheet Page 4 MMIX1F360N15T2 Datasheet Page 5 MMIX1F360N15T2 Datasheet Page 6 MMIX1F360N15T2 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • MMIX1F360N15T2 Datasheet
  • where to find MMIX1F360N15T2
  • IXYS

  • IXYS MMIX1F360N15T2
  • MMIX1F360N15T2 PDF Datasheet
  • MMIX1F360N15T2 Stock

  • MMIX1F360N15T2 Pinout
  • Datasheet MMIX1F360N15T2
  • MMIX1F360N15T2 Supplier

  • IXYS Distributor
  • MMIX1F360N15T2 Price
  • MMIX1F360N15T2 Distributor

MMIX1F360N15T2 Specifications

ManufacturerIXYS
SeriesGigaMOS™, TrenchT2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C235A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs715nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds47500pF @ 25V
FET Feature-
Power Dissipation (Max)680W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package24-SMPD
Package / Case24-PowerSMD, 21 Leads

The Products You May Be Interested In

GP2M004A060PG

Global Power Technologies Group

Manufacturer

Global Power Technologies Group

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.5Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

545pF @ 25V

FET Feature

-

Power Dissipation (Max)

86.2W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

FQP34N20

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

31A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

75mOhm @ 15.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

78nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3100pF @ 25V

FET Feature

-

Power Dissipation (Max)

180W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

DMP4010SK3Q-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

15A (Ta), 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9.9mOhm @ 9.8A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

91nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

4234pF @ 20V

FET Feature

-

Power Dissipation (Max)

1.7W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

NVMFS5C426NAFT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

41A (Ta), 235A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

65nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4300pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 128W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads

IXKG25N80C

IXYS

Manufacturer

IXYS

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

150mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

4V @ 2mA

Gate Charge (Qg) (Max) @ Vgs

166nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISO264™

Package / Case

ISO264™

Recently Sold

NLC453232T-150K-PF

NLC453232T-150K-PF

TDK

FIXED IND 15UH 450MA 700 MOHM

PIC32MX795F512L-80I/PT

PIC32MX795F512L-80I/PT

Microchip Technology

IC MCU 32BIT 512KB FLASH 100TQFP

ADG849YKSZ-REEL7

ADG849YKSZ-REEL7

Analog Devices

IC SWITCH SPDT SC70-6

ATMEGA8L-8PU

ATMEGA8L-8PU

Microchip Technology

IC MCU 8BIT 8KB FLASH 28DIP

HSMP-3820-TR1G

HSMP-3820-TR1G

Broadcom

RF DIODE PIN 50V SOT23-3

MTA8ATF51264HZ-2G6B1

MTA8ATF51264HZ-2G6B1

Micron Technology Inc.

IC DRAM 32G PARALLEL 1333MHZ

PIC18F2331-I/SO

PIC18F2331-I/SO

Microchip Technology

IC MCU 8BIT 8KB FLASH 28SOIC

MT47H64M16NF-25E AIT:M

MT47H64M16NF-25E AIT:M

Micron Technology Inc.

IC DRAM 1G PARALLEL 84FBGA

64900001039

64900001039

Littelfuse

FUSE BLOCK CART 250V 6.3A PCB

DS26521LN+

DS26521LN+

Maxim Integrated

IC TXRX T1/E1/J1 64-LQFP

MSS1P4-M3/89A

MSS1P4-M3/89A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 1A MICROSMP

YC324-JK-071KL

YC324-JK-071KL

Yageo

RES ARRAY 4 RES 1K OHM 2012