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MMDF3N02HDR2G

MMDF3N02HDR2G

For Reference Only

Part Number MMDF3N02HDR2G
PNEDA Part # MMDF3N02HDR2G
Description MOSFET P-CH 20V 3.8A 8-SOIC
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,262
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

MMDF3N02HDR2G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberMMDF3N02HDR2G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
MMDF3N02HDR2G, MMDF3N02HDR2G Datasheet (Total Pages: 8, Size: 133.53 KB)
PDFMMDF3N02HDR2G Datasheet Cover
MMDF3N02HDR2G Datasheet Page 2 MMDF3N02HDR2G Datasheet Page 3 MMDF3N02HDR2G Datasheet Page 4 MMDF3N02HDR2G Datasheet Page 5 MMDF3N02HDR2G Datasheet Page 6 MMDF3N02HDR2G Datasheet Page 7 MMDF3N02HDR2G Datasheet Page 8

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MMDF3N02HDR2G Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs90mOhm @ 3A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds630pF @ 16V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

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