MMBTH10LT3G
For Reference Only
| Part Number | MMBTH10LT3G |
| PNEDA Part # | MMBTH10LT3G |
| Description | RF TRANS NPN 25V 650MHZ SOT23-3 |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 74,460 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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MMBTH10LT3G Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | MMBTH10LT3G |
| Category | Semiconductors › Transistors › Transistors - Bipolar (BJT) - RF |
| Datasheet |
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MMBTH10LT3G Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| Frequency - Transition | 650MHz |
| Noise Figure (dB Typ @ f) | - |
| Gain | - |
| Power - Max | 225mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA, 10V |
| Current - Collector (Ic) (Max) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |
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Manufacturer Broadcom Limited Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 12V Frequency - Transition 8GHz Noise Figure (dB Typ @ f) 1.4dB ~ 3dB @ 1GHz ~ 4GHz Gain 9dB ~ 18dB Power - Max 500mW DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 8V Current - Collector (Ic) (Max) 60mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-86 Supplier Device Package 86 Plastic |
Manufacturer Broadcom Limited Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 5.5V Frequency - Transition - Noise Figure (dB Typ @ f) 1.1dB ~ 1.4dB @ 900MHz Gain 11dB ~ 13dB Power - Max 100mW DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 1mA, 2.7V Current - Collector (Ic) (Max) 8mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23 |
Manufacturer Infineon Technologies Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 9V Frequency - Transition 14GHz Noise Figure (dB Typ @ f) 1dB @ 1.8GHz Gain 15.5dB Power - Max 210mW DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 15mA, 3V Current - Collector (Ic) (Max) 35mA Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-723 Supplier Device Package TSFP-3-1 |
